- Gowrish B
- Darshak Bhatt
- Tharun Kumar Reddy Bollu
- Anand Bulusu
- Ashish Kumar Chowdhary
- Bishnu Prasad Das
- Avirup Dasgupta
- Sudeb Dasgupta
- Arnab Datta
- Utpal Dey
- Devesh Dwivedi
- Debashis Ghosh
- Anshul Jaiswal
- MV Kartikeyan
- Priyansha Kaurav
- Brajesh Kumar Kaushik
- Saurabh Khanna
- Brijesh Kumar
- Dheeraj Kumar
- Saravana Kumar M
- Sanjeev Manhas
- Sparsh Mittal
- Akhilesh Mohan
- Rajib Kumar Panigrahi
- Vinod Pankajakshan
- Nagendra P. Pathak
- Amalendu Patnaik
- Vishvendra Singh Poonia
- Pyari Mohan Pradhan
- Tanmoy Pramanik
- Karun Rawat
- Meenakshi Rawat
- Sourajeet Roy
- Abhay Kumar Sah
- Biplab Sarkar
- Ekant Sharma
- Dharmendra Singh
- Sandeep Kumar Singh
- Anshul Tyagi
Magnetic Random Access Memory, Magnetic Thin Films and Materials for Electronic Device Applications, Non-volatile Memory, Reliability Characterization and Modeling of Emerging Non-volatile Memories, Device Physics & Reliability, Device Modeling and Simulation
From | To | Designation | Organisation |
---|---|---|---|
2018 | 2020 | Quality and Reliability R&D Engineer | Intel, Hillsboro, Oregon, USA |
Degree | Subject | University | Year Studied |
---|---|---|---|
BE | Instrumentation and Electronics Engineering | Jadavpur University | 2010 |
MTech | Electrical Engineering (Microelectronics) | Indian Institute of Technology Bombay | 2012 |
PhD | Electrical and Computer Engineering (Solid State Electronics) | The University of Texas at Austin | 2018 |
Scheme | Sponsoring Agency | Other Faculties | Year Sponsored |
---|---|---|---|
Startup Research Grant | Science and Engineering Research Board, Govt. of India | 2021-2023 | |
Faculty Initiation Grant | IIT Roorkee | 2022-2024 |
Title | Course Code | Course | Semester |
---|---|---|---|
Semiconductor Devices and Technology | ECN 242 | B. Tech. ECE II Year (Theory only) | Autumn 2021 |
Semiconductor Devices and Technology | ECN 242 | B. Tech. ECE II Year | Autumn 2022 (Jointly with Prof. A. Dasgupta) |
Digital Logic Design | ECN 104 | B. Tech. ECE I Year | Spring 2022 |
Magnetic Random Access Memory | ECN 635 | PhD | Spring 2022 |
Microelectronics Devices, Circuits, Technology | ECN 341 | B. Tech. ECE III Year | Autumn 2021 (Jointly with Prof. A. Dasgupta) |
Microelectronics Simulation Lab I and II | ECN 576, ECN 598 | M. Tech. | Spring 2022, Autumn 2022 |
Link to Google scholar profile
Journal Publications:
- S. Ahirwar, P. Mundhe, T. Pramanik, Quantifying External Magnetic Field Immunity of the Write Process in Perpendicular Spin-transfer-torque Random Access Memory, accepted, to appear in IEEE Transaction on Magnetics, 2023.
- A. Nisar, T. Pramanik, B. K. Kaushik, Impact of Reference-Layer Stray Field on the Write-Error Rate of Perpendicular Spin-Transfer-Torque Random-Access Memory, Physical Review Applied 19 (2), 024016, 2023.
- H. Pal, S. Singh, C. Guo, W. Guo, O. Badami, T. Pramanik, B. Sarkar, Lateral P-N junction Photodiodes using Lateral Polarity Structure GaN Films: A Theoretical Perspective, accepted, to appear in Journal of Electronic Materials, 2023.
- S. Chowdhury, A. Roy, M. H. Alam, T. Pramanik, J. Depoy, R. Chrostowski, F. Mangolini, D. Akinwande, and S. K. Banerjee, Role of Hydrogen in Suppressing Secondary Nucleation in Chemical Vapor-Deposited MoS2, accepted, to appear in ACS Applied Electronic Materials, DOI: 10.1021/acsaelm.2c01258, 2022.
- A. Roy, T. Pramanik, S. Chowdhury, and S. K. Banerjee, Phase-Field Modeling for the Morphological Evolution of Chemical Vapor Deposited Two-Dimensional MoSe2, ACS Applied Nano Materials 5 (10), 15488-15497, 2022.
- U. Roy, T. Pramanik, S. Roy, A. Chatterjee, L. F. Register, S. K. Banerjee, Machine Learning for Statistical Modeling: The Case of Perpendicular Spin-Transfer-Torque Random Access Memory, ACM Transactions on Design Automation of Electronic Systems, 26,3, 2021.
- N. Prasad, T. Pramanik, S.K. Banerjee, L.F. Register, Realizing both short-and long-term memory within a single magnetic tunnel junction based synapse, Journal of Applied Physics, 127, 9, 2020.
- A. Roy, R. Dey, T. Pramanik, A. Rai, R. Schalip, S. Majumder, S. Guchhait, S. K. Banerjee, Structural and magnetic properties of molecular beam epitaxy grown chromium selenide thin films, Physical Review Materials, 4, 2, 2020.
- T. Pramanik, U. Roy, P. Jadaun, L.F. Register, S.K. Banerjee, Write error rates of in-plane spin-transfer-torque random access memory calculated from rare-event enhanced micromagnetic simulations, Journal of Magnetism and Magnetic Materials 467, 96, 2018.
- A. Roy, R. Ghosh, A. Rai, A. Sanne, K. Kim, H.C.P. Movva, R. Dey, T. Pramanik, S. Chowdhury, E. Tutuc, S. K. Banerjee, Intra-domain periodic defects in monolayer MoS2, Applied Physics Letters 110 (20), 201905, 2017.
- T. Pramanik, A. Roy, R. Dey, A. Rai, S. Guchhait, H.C.P. Movva, C-C Hsieh, S. K. Banerjee, Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy, Journal of Magnetism and Magnetic Materials 437, 72, 2017.
- R. Dey, A. Roy, T. Pramanik, A. Rai, S. H. Shin, S. Majumder, L. F. Register, S. K. Banerjee, Detection of current induced spin polarization in epitaxial Bi2Te3 thin film, Applied Physics Letters 110 (12), 122403, 2017.
- R. Dey, A. Roy, T. Pramanik, S. Guchhait, S. Sonde, A. Rai, L. F. Register, S. K. Banerjee, Localization and interaction effects of epitaxial Bi2Se3 bulk states in two-dimensional limit, Journal of Applied Physics 120 (16), 164301, 2016.
- U. Roy, T. Pramanik, L. F. Register, S. K. Banerjee, Write error rate of spin-transfer-torque random access memory including micromagnetic effects using rare event enhancement, IEEE Transactions on Magnetics 52 (10), 1, 2016.
- A. Roy, H.C.P. Movva, B. Satpati, K. Kim, R. Dey, A. Rai, T. Pramanik, S. Guchhait, E. Tutuc, S. K. Banerjee, Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy, ACS applied materials & interfaces 8 (11), 7396, 2016.
- T. Pramanik; U. Roy, L. F. Register, S. K. Banerjee, Proposal of a Multistate Memory Using Voltage Controlled Magnetic Anisotropy of a Cross-Shaped Ferromagnet, IEEE Transactions on Nanotechnology 14 (5), 883, 2015.
- U. Roy, R. Dey, T. Pramanik, B. Ghosh, L. F. Register, S. K. Banerjee, Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator., Journal of Applied Physics 117, 163906, 2015.
- A. Roy, S. Guchhait, R. Dey, T. Pramanik, C-C. Hsieh, A. Rai, S.K. Banerjee, Perpendicular magnetic anisotropy and spin glass-like behavior in molecular beam epitaxy grown chromium telluride thin films, ACS Nano 9 (4), 3772, 2015.
- R. Dey, T. Pramanik, A. Roy, A. Rai, S. Guchhait, S. Sonde, H.C.P. Movva, L. Colombo, L. F. Register, S. K. Banerjee, Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3, Applied Physics Letters 104, 223111, 2014.
- U. Roy, T. Pramanik, M. Tsoi, L. F. Register, and S. K. Banerjee, Micromagnetic study of spin-transfer-torque switching of a ferromagnetic cross towards multi-state spin-transfer-torque based random access memory, Journal of Applied Physics 113, 223904, 2013.
- A. Roy, S. Guchhait, S. Sonde, R. Dey, T. Pramanik, A. Rai, H.C.P. Movva, L. Colombo, S. K. Banerjee, Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si(111)-(7 × 7) surface by molecular beam epitaxy, Applied Physics Letters 102 (16), 163118, 2013.
- D. Banerjee, R.B.R. Adari, T. Pramanik, S. Ganguly, D. Saha, Effects of Device Geometry on Output Circular Polarization in a Spin-LED, IEEE Transactions on Magnetics 48 (11), 2761, 2012.
Conference Publications/Presentations:
- S. Ahirwar, T. Pramanik, A Simulation Study of Stand-By and Active Write Mode Magnetic Immunity of Perpendicular Spin-Transfer-Torque Random-Access Memory, IEEE International Conference on Emerging Electronics (ICEE), Bengaluru, Dec. 2022.
- Y-F Chang, I. Karpov, R. Hopkins, D. Janosky, J. Medeiros, B. Sherrill, J. Zhang, Y. Huang, T. Pramanik, A. Chen, T. Acosta, A. Guler, J. A. O'Donnell, P. A. Quintero, N. Strutt, O. Golonzka, C. Connor, J. C. Lee, J. Hicks, Embedded emerging memory technologies for neuromorphic computing: temperature instability and reliability, IEEE International Reliability Physics Symposium (IRPS), 2021.
- R. Grover, T. Acosta, E. Armagan, C. Auth, S. Chugh, K. Downes, M. Hattendorf, N. Jack, S. Joshi, R. Kasim, G. Leatherman, S.-H. Lee, C. Lin, A. Madhavan, H. Mao, A. Lowrie, G. Martin, G. McPherson, P. Nayak, A. Neale, D. Nminibapiel, B. Orr, J. Palmer, C. Pelto, S. S. Poon, I. Post, T. Pramanik, A. Rahman, S. Ramey, N. Seifert, K. Sethi, A. Schmitz, H. Wu, A. Yeoh, A Reliability Overview of Intel’s 10+ Logic Technology, IEEE International Reliability Physics Symposium (IRPS), 2020.
- J.G. Alzate, U. Arslan, P. Bai, J. Brockman, Y.-J. Chen, N. Das, K. Fischer, T. Ghani, P. Heil, P. Hentges, R. Jahan, A. Littlejohn, M. Mainuddin, D. Ouellette, J. Pellegren, T. Pramanik, C. Puls, P. Quintero, T. Rahman, M. Sekhar, B. Sell, M. Seth, A. Smith, A. Smith, L. Wei, C. Wiegand, O. Golonzka, F. Hamzaoglu, 2 MB Array-Level Demonstration of STT-MRAM Process and Performance Towards L4 Cache Applications, IEEE International Electron Devices Meeting (IEDM), 2019.
- J.A. O'Donnell, C. Connor, T. Pramanik, J. Hicks, J.G. Alzate, F. Hamzaoglu, J. Brockman, O. Golonzka, K. Fischer, eNVM MRAM Retention Reliability Modeling in 22FFL FinFET Technology, IEEE International Reliability Physics Symposium (IRPS), 2019.
- U. Roy, T. Pramanik, S. Roy, L.F. Register, S.K. Banerjee, Machine learning for variability aware statistical device design: The case of perpendicular spin-transfer-torque random access memory, 75th Annual Device Research Conference (DRC), 2017.
- T. Pramanik, L. F. Register, and S. K. Banerjee, Micromagnetic effects on the write error rates of in-plane and perpendicular spin-transfer-torque random access memory via rare-event-enhanced simulation, Semiconductor Research Corporation (SRC) TECHCON, Austin, Sept. 2017.
- T. Pramanik, U. Roy, L. F. Register, S. K. Banerjee, Write error rates of perpendicular spin-transfer-torque random access memory including micromagnetic effects, 61st Annual Conference on Magnetism and Magnetic Materials (MMM), New Orleans, Nov. 2016.
- T. Pramanik, U. Roy, L. F. Register, S. K. Banerjee, Write Error Rate of Spin-transfer-torque Random Access Memory Including Micromagnetic Effects Using Rare Event Enhancement, Semiconductor Research Corporation (SRC) TECHCON, Austin, Sept. 2016.
- U. Roy, D.L. Kencke, T. Pramanik, L.F. Register, S.K. Banerjee, Write error rate in spin-transfer-torque random access memory including micromagnetic effects, 73rd Annual Device Research Conference (DRC), 2015.
- T. Pramanik, U. Roy, L. F. Register, M. Tsoi, and S. K. Banerjee, Micromagnetic simulations of spin-wave normal modes and the spin-transfer-torque driven magnetization dynamics of a ferromagnetic cross, Journal of Applied Physics, 115, 17D123, 2014, Proceedings of 58th Annual Conference of Magnetism and Magnetic Materials (MMM).
- 10. T. Pramanik, U. Roy, N. Asoudegi, L. F. Register and S. K. Banerjee, Proposal of a multi-state memory using voltage controlled magnetic anisotropy of a cross-shaped ferromagnet, 32nd International Conference on the Physics of Semiconductors, Austin, August, 2014.
- T. Pramanik, U. Roy, L. F. Register1, M. Tsoi, S. K. Banerjee, Micromagnetic study of spin–transfer-torque switching of a ferromagnetic cross towards multi-state spin-transfer-torque based random access memory, Semiconductor Research Corporation (SRC) TECHCON, Austin, Sept. 2013.
- S. Ganguly, T. Pramanik, and D. Saha, Effect of holes and electric fields on spin injection and transport through ferromagnet/semiconductor junction, Presented at 4th WUN International Conference on Spintronics, Sydney, 2012.
Patents:
- D. Ouellette, C. Wiegand, J. Brockman, T. Rahman, O. Golonzka, A. Smith, A. Smith, J. Pellegren, A. Littlejohn, J. G. Alzate-Vinasco, Y-J. Chen, T. Pramanik, Intel Corporation, Magnetic memory devices and methods of fabrication. U.S. Patent Application 16/706,470, filed June 10, 2021.