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Tanmoy Pramanik

Tanmoy Pramanik

Assistant Professor

pramanik.tanmoy[at]ece.iitr.ac.in
My Google Scholar

Magnetic Random Access Memory, Magnetic Thin Films and Materials for Electronic Device Applications, Non-volatile Memory, Reliability Characterization and Modeling of Emerging Non-volatile Memories, Device Physics & Reliability, Device Modeling and Simulation

From To Designation Organisation
2018 2020 Quality and Reliability R&D Engineer Intel, Hillsboro, Oregon, USA
Degree Subject University Year Studied
BE Instrumentation and Electronics Engineering Jadavpur University 2010
MTech Electrical Engineering (Microelectronics) Indian Institute of Technology Bombay 2012
PhD Electrical and Computer Engineering (Solid State Electronics) The University of Texas at Austin 2018
Scheme Sponsoring Agency Other Faculties Year Sponsored
Startup Research Grant Science and Engineering Research Board, Govt. of India 2021-2023
Faculty Initiation Grant IIT Roorkee 2022-2024
Title Course Code Course Semester
Semiconductor Devices and Technology ECN 242 B. Tech. ECE II Year (Theory only) Autumn 2021
Semiconductor Devices and Technology ECN 242 B. Tech. ECE II Year Autumn 2022 (Jointly with Prof. A. Dasgupta)
Digital Logic Design ECN 104 B. Tech. ECE I Year Spring 2022
Magnetic Random Access Memory ECN 635 PhD Spring 2022
Microelectronics Devices, Circuits, Technology ECN 341 B. Tech. ECE III Year Autumn 2021 (Jointly with Prof. A. Dasgupta)
Microelectronics Simulation Lab I and II ECN 576, ECN 598 M. Tech. Spring 2022, Autumn 2022

Link to Google scholar profile

Journal Publications:

  1. S. Ahirwar, P. Mundhe, T. Pramanik, Quantifying External Magnetic Field Immunity of the Write Process in Perpendicular Spin-transfer-torque Random Access Memory, accepted, to appear in IEEE Transaction on Magnetics, 2023.
  2. A. Nisar, T. Pramanik, B. K. Kaushik, Impact of Reference-Layer Stray Field on the Write-Error Rate of Perpendicular Spin-Transfer-Torque Random-Access Memory, Physical Review Applied 19 (2), 024016, 2023.
  3. H. Pal, S. Singh, C. Guo, W. Guo, O. Badami, T. Pramanik, B. Sarkar, Lateral P-N junction Photodiodes using Lateral Polarity Structure GaN Films: A Theoretical Perspective, accepted, to appear in Journal of Electronic Materials, 2023.
  4. S. Chowdhury, A. Roy, M. H. Alam, T. Pramanik, J. Depoy, R. Chrostowski, F. Mangolini, D. Akinwande, and S. K. Banerjee, Role of Hydrogen in Suppressing Secondary Nucleation in Chemical Vapor-Deposited MoS2, accepted, to appear in ACS Applied Electronic Materials, DOI: 10.1021/acsaelm.2c01258, 2022.
  5. A. Roy, T. Pramanik, S. Chowdhury, and S. K. Banerjee, Phase-Field Modeling for the Morphological Evolution of Chemical Vapor Deposited Two-Dimensional MoSe2, ACS Applied Nano Materials 5 (10), 15488-15497, 2022.
  6. U. Roy, T. Pramanik, S. Roy, A. Chatterjee, L. F. Register, S. K. Banerjee, Machine Learning for Statistical Modeling: The Case of Perpendicular Spin-Transfer-Torque Random Access Memory, ACM Transactions on Design Automation of Electronic Systems, 26,3, 2021.
  7. N. Prasad, T. Pramanik, S.K. Banerjee, L.F. Register, Realizing both short-and long-term memory within a single magnetic tunnel junction based synapse, Journal of Applied Physics, 127, 9, 2020.
  8. A. Roy, R. Dey, T. Pramanik, A. Rai, R. Schalip, S. Majumder, S. Guchhait, S. K. Banerjee, Structural and magnetic properties of molecular beam epitaxy grown chromium selenide thin films, Physical Review Materials, 4, 2, 2020.
  9. T. Pramanik, U. Roy, P. Jadaun, L.F. Register, S.K. Banerjee, Write error rates of in-plane spin-transfer-torque random access memory calculated from rare-event enhanced micromagnetic simulations, Journal of Magnetism and Magnetic Materials 467, 96, 2018.
  10. A. Roy, R. Ghosh, A. Rai, A. Sanne, K. Kim, H.C.P. Movva, R. Dey, T. Pramanik, S. Chowdhury, E. Tutuc, S. K. Banerjee, Intra-domain periodic defects in monolayer MoS2, Applied Physics Letters 110 (20), 201905, 2017.
  11. T. Pramanik, A. Roy, R. Dey, A. Rai, S. Guchhait, H.C.P. Movva, C-C Hsieh, S. K. Banerjee, Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy, Journal of Magnetism and Magnetic Materials 437, 72, 2017.
  12. R. Dey, A. Roy, T. Pramanik, A. Rai, S. H. Shin, S. Majumder, L. F. Register, S. K. Banerjee, Detection of current induced spin polarization in epitaxial Bi2Te3 thin film, Applied Physics Letters 110 (12), 122403, 2017.
  13. R. Dey, A. Roy, T. Pramanik, S. Guchhait, S. Sonde, A. Rai, L. F. Register, S. K. Banerjee, Localization and interaction effects of epitaxial Bi2Se3 bulk states in two-dimensional limit, Journal of Applied Physics 120 (16), 164301, 2016.
  14. U. Roy, T. Pramanik, L. F. Register, S. K. Banerjee, Write error rate of spin-transfer-torque random access memory including micromagnetic effects using rare event enhancement, IEEE Transactions on Magnetics 52 (10), 1, 2016.
  15. A. Roy, H.C.P. Movva, B. Satpati, K. Kim, R. Dey, A. Rai, T. Pramanik, S. Guchhait, E. Tutuc, S. K. Banerjee, Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy, ACS applied materials & interfaces 8 (11), 7396, 2016.
  16. T. Pramanik; U. Roy, L. F. Register, S. K. Banerjee, Proposal of a Multistate Memory Using Voltage Controlled Magnetic Anisotropy of a Cross-Shaped Ferromagnet, IEEE Transactions on Nanotechnology 14 (5), 883, 2015.
  17. U. Roy, R. Dey, T. Pramanik, B. Ghosh, L. F. Register, S. K. Banerjee, Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator., Journal of Applied Physics 117, 163906, 2015.
  18. A. Roy, S. Guchhait, R. Dey, T. Pramanik, C-C. Hsieh, A. Rai, S.K. Banerjee, Perpendicular magnetic anisotropy and spin glass-like behavior in molecular beam epitaxy grown chromium telluride thin films, ACS Nano 9 (4), 3772, 2015.
  19. R. Dey, T. Pramanik, A. Roy, A. Rai, S. Guchhait, S. Sonde, H.C.P. Movva, L. Colombo, L. F. Register, S. K. Banerjee, Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3, Applied Physics Letters 104, 223111, 2014.
  20. U. Roy, T. Pramanik, M. Tsoi, L. F. Register, and S. K. Banerjee, Micromagnetic study of spin-transfer-torque switching of a ferromagnetic cross towards multi-state spin-transfer-torque based random access memory, Journal of Applied Physics 113, 223904, 2013.
  21. A. Roy, S. Guchhait, S. Sonde, R. Dey, T. Pramanik, A. Rai, H.C.P. Movva, L. Colombo, S. K. Banerjee, Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si(111)-(7 × 7) surface by molecular beam epitaxy, Applied Physics Letters 102 (16), 163118, 2013.
  22. D. Banerjee, R.B.R. Adari, T. Pramanik, S. Ganguly, D. Saha, Effects of Device Geometry on Output Circular Polarization in a Spin-LED, IEEE Transactions on Magnetics 48 (11), 2761, 2012.

Conference Publications/Presentations:

  1. S. Ahirwar, T. Pramanik, A Simulation Study of Stand-By and Active Write Mode Magnetic Immunity of Perpendicular Spin-Transfer-Torque Random-Access Memory, IEEE International Conference on Emerging Electronics (ICEE), Bengaluru, Dec. 2022.
  2. Y-F Chang, I. Karpov, R. Hopkins, D. Janosky, J. Medeiros, B. Sherrill, J. Zhang, Y. Huang, T. Pramanik, A. Chen, T. Acosta, A. Guler, J. A. O'Donnell, P. A. Quintero, N. Strutt, O. Golonzka, C. Connor, J. C. Lee, J. Hicks, Embedded emerging memory technologies for neuromorphic computing: temperature instability and reliability, IEEE International Reliability Physics Symposium (IRPS), 2021.
  3. R. Grover, T. Acosta, E. Armagan, C. Auth, S. Chugh, K. Downes, M. Hattendorf, N. Jack, S. Joshi, R. Kasim, G. Leatherman, S.-H. Lee, C. Lin, A. Madhavan, H. Mao, A. Lowrie, G. Martin, G. McPherson, P. Nayak, A. Neale, D. Nminibapiel, B. Orr, J. Palmer, C. Pelto, S. S. Poon, I. Post, T. Pramanik, A. Rahman, S. Ramey, N. Seifert, K. Sethi, A. Schmitz, H. Wu, A. Yeoh, A Reliability Overview of Intel’s 10+ Logic Technology, IEEE International Reliability Physics Symposium (IRPS), 2020.
  4. J.G. Alzate, U. Arslan, P. Bai, J. Brockman, Y.-J. Chen, N. Das, K. Fischer, T. Ghani, P. Heil, P. Hentges, R. Jahan, A. Littlejohn, M. Mainuddin, D. Ouellette, J. Pellegren, T. Pramanik, C. Puls, P. Quintero, T. Rahman, M. Sekhar, B. Sell, M. Seth, A. Smith, A. Smith, L. Wei, C. Wiegand, O. Golonzka, F. Hamzaoglu, 2 MB Array-Level Demonstration of STT-MRAM Process and Performance Towards L4 Cache Applications, IEEE International Electron Devices Meeting (IEDM), 2019.
  5. J.A. O'Donnell, C. Connor, T. Pramanik, J. Hicks, J.G. Alzate, F. Hamzaoglu, J. Brockman, O. Golonzka, K. Fischer, eNVM MRAM Retention Reliability Modeling in 22FFL FinFET Technology, IEEE International Reliability Physics Symposium (IRPS), 2019.
  6. U. Roy, T. Pramanik, S. Roy, L.F. Register, S.K. Banerjee, Machine learning for variability aware statistical device design: The case of perpendicular spin-transfer-torque random access memory, 75th Annual Device Research Conference (DRC), 2017.
  7. T. Pramanik, L. F. Register, and S. K. Banerjee, Micromagnetic effects on the write error rates of in-plane and perpendicular spin-transfer-torque random access memory via rare-event-enhanced simulation, Semiconductor Research Corporation (SRC) TECHCON, Austin, Sept. 2017.
  8. T. Pramanik, U. Roy, L. F. Register, S. K. Banerjee, Write error rates of perpendicular spin-transfer-torque random access memory including micromagnetic effects, 61st Annual Conference on Magnetism and Magnetic Materials (MMM), New Orleans, Nov. 2016.
  9. T. Pramanik, U. Roy, L. F. Register, S. K. Banerjee, Write Error Rate of Spin-transfer-torque Random Access Memory Including Micromagnetic Effects Using Rare Event Enhancement, Semiconductor Research Corporation (SRC) TECHCON, Austin, Sept. 2016.
  10. U. Roy, D.L. Kencke, T. Pramanik, L.F. Register, S.K. Banerjee, Write error rate in spin-transfer-torque random access memory including micromagnetic effects, 73rd Annual Device Research Conference (DRC), 2015.
  11. T. Pramanik, U. Roy, L. F. Register, M. Tsoi, and S. K. Banerjee, Micromagnetic simulations of spin-wave normal modes and the spin-transfer-torque driven magnetization dynamics of a ferromagnetic cross, Journal of Applied Physics, 115, 17D123, 2014, Proceedings of 58th Annual Conference of Magnetism and Magnetic Materials (MMM).
  12. 10. T. Pramanik, U. Roy, N. Asoudegi, L. F. Register and S. K. Banerjee, Proposal of a multi-state memory using voltage controlled magnetic anisotropy of a cross-shaped ferromagnet, 32nd International Conference on the Physics of Semiconductors, Austin, August, 2014.
  13. T. Pramanik, U. Roy, L. F. Register1, M. Tsoi, S. K. Banerjee, Micromagnetic study of spin–transfer-torque switching of a ferromagnetic cross towards multi-state spin-transfer-torque based random access memory, Semiconductor Research Corporation (SRC) TECHCON, Austin, Sept. 2013.
  14. S. Ganguly, T. Pramanik, and D. Saha, Effect of holes and electric fields on spin injection and transport through ferromagnet/semiconductor junction, Presented at 4th WUN International Conference on Spintronics, Sydney, 2012.

Patents:

  1. D. Ouellette, C. Wiegand, J. Brockman, T. Rahman, O. Golonzka, A. Smith, A. Smith, J. Pellegren, A. Littlejohn, J. G. Alzate-Vinasco, Y-J. Chen, T. Pramanik, Intel Corporation, Magnetic memory devices and methods of fabrication. U.S. Patent Application 16/706,470, filed June 10, 2021.