- Gowrish B
- Darshak Bhatt
- Tharun Kumar Reddy Bollu
- Anand Bulusu
- Ashish Kumar Chowdhary
- Bishnu Prasad Das
- Avirup Dasgupta
- Sudeb Dasgupta
- Arnab Datta
- Utpal Dey
- Devesh Dwivedi
- Debashis Ghosh
- Anshul Jaiswal
- MV Kartikeyan
- Priyansha Kaurav
- Brajesh Kumar Kaushik
- Saurabh Khanna
- Brijesh Kumar
- Dheeraj Kumar
- Saravana Kumar M
- Sanjeev Manhas
- Sparsh Mittal
- Akhilesh Mohan
- Rajib Kumar Panigrahi
- Vinod Pankajakshan
- Nagendra P. Pathak
- Amalendu Patnaik
- Vishvendra Singh Poonia
- Pyari Mohan Pradhan
- Tanmoy Pramanik
- Karun Rawat
- Meenakshi Rawat
- Sourajeet Roy
- Abhay Kumar Sah
- Biplab Sarkar
- Ekant Sharma
- Dharmendra Singh
- Sandeep Kumar Singh
- Anshul Tyagi
Tanmoy Pramanik
Assistant Professor
pramanik.tanmoy[at]ece.iitr.ac.in+91-1332-284964
My Google Scholar
Magnetic Random Access Memory, Magnetic Thin Films and Materials for Electronic Device Applications, Non-volatile Memory, Reliability Characterization and Modeling of Emerging Non-volatile Memories, Device Physics & Reliability, Device Modeling and Simulation
From | To | Designation | Organisation |
---|---|---|---|
2018 | 2020 | Quality and Reliability R&D Engineer | Intel, Hillsboro, Oregon, USA |
Degree | Subject | University | Year Studied |
---|---|---|---|
BE | Instrumentation and Electronics Engineering | Jadavpur University | 2010 |
MTech | Electrical Engineering (Microelectronics) | Indian Institute of Technology Bombay | 2012 |
PhD | Electrical and Computer Engineering (Solid State Electronics) | The University of Texas at Austin | 2018 |
Scheme | Sponsoring Agency | Other Faculties | Year Sponsored |
---|---|---|---|
Startup Research Grant | Science and Engineering Research Board, Govt. of India | 2021-2023 | |
Faculty Initiation Grant | IIT Roorkee | 2022-2024 |
Title | Course Code | Course | Semester |
---|---|---|---|
Semiconductor Devices and Technology | ECN 242 | B. Tech. ECE II Year (Theory only) | Autumn 2021 |
Semiconductor Devices and Technology | ECN 242 | B. Tech. ECE II Year | Autumn 2022 (Jointly with Prof. A. Dasgupta) |
Digital Logic Design | ECN 104 | B. Tech. ECE I Year | Spring 2022 |
Magnetic Random Access Memory | ECN 635 | PhD | Spring 2022 |
Microelectronics Devices, Circuits, Technology | ECN 341 | B. Tech. ECE III Year | Autumn 2021 (Jointly with Prof. A. Dasgupta) |
Microelectronics Simulation Lab I and II | ECN 576, ECN 598 | M. Tech. | Spring 2022, Autumn 2022 |
Link to Google scholar profile
Journal Publications:
- Nisar, A., Kaushik, B. K., & Pramanik, T., Size dependence of domain wall mediated switching dynamics of perpendicular magnetic tunnel junctions in the presence of reference layer stray field, accepted, to appear in AIP Advances, 2023.
- Patel, Jyoti, Tanmoy Pramanik, and Biplab Sarkar, Analytical Model of Center Potential in GaN Vertical Junctionless Power Fin-MOSFETs for Fast Device-Design Optimization, IEEE Transactions on Electron Devices (2023).
- S. Ahirwar, P. Mundhe, T. Pramanik, Quantifying External Magnetic Field Immunity of the Write Process in Perpendicular Spin-transfer-torque Random Access Memory, accepted, to appear in IEEE Transaction on Magnetics, 2023.
- Sarkar, B., Wang, J., Badami, O., Pramanik, T., Kwon, W., Watanabe, H. and Amano, H., Ga-polar GaN Camel diode enabled by a low-cost Mg-diffusion process, accepted, to appear in Applied Physics Express, 2023.
- A. Nisar, T. Pramanik, B. K. Kaushik, Impact of Reference-Layer Stray Field on the Write-Error Rate of Perpendicular Spin-Transfer-Torque Random-Access Memory, Physical Review Applied 19 (2), 024016, 2023.
- H. Pal, S. Singh, C. Guo, W. Guo, O. Badami, T. Pramanik, B. Sarkar, Lateral P-N junction Photodiodes using Lateral Polarity Structure GaN Films: A Theoretical Perspective, accepted, to appear in Journal of Electronic Materials, 2023.
- S. Chowdhury, A. Roy, M. H. Alam, T. Pramanik, J. Depoy, R. Chrostowski, F. Mangolini, D. Akinwande, and S. K. Banerjee, Role of Hydrogen in Suppressing Secondary Nucleation in Chemical Vapor-Deposited MoS2, accepted, to appear in ACS Applied Electronic Materials, DOI: 10.1021/acsaelm.2c01258, 2022.
- A. Roy, T. Pramanik, S. Chowdhury, and S. K. Banerjee, Phase-Field Modeling for the Morphological Evolution of Chemical Vapor Deposited Two-Dimensional MoSe2, ACS Applied Nano Materials 5 (10), 15488-15497, 2022.
- U. Roy, T. Pramanik, S. Roy, A. Chatterjee, L. F. Register, S. K. Banerjee, Machine Learning for Statistical Modeling: The Case of Perpendicular Spin-Transfer-Torque Random Access Memory, ACM Transactions on Design Automation of Electronic Systems, 26,3, 2021.
- N. Prasad, T. Pramanik, S.K. Banerjee, L.F. Register, Realizing both short-and long-term memory within a single magnetic tunnel junction based synapse, Journal of Applied Physics, 127, 9, 2020.
- A. Roy, R. Dey, T. Pramanik, A. Rai, R. Schalip, S. Majumder, S. Guchhait, S. K. Banerjee, Structural and magnetic properties of molecular beam epitaxy grown chromium selenide thin films, Physical Review Materials, 4, 2, 2020.
- T. Pramanik, U. Roy, P. Jadaun, L.F. Register, S.K. Banerjee, Write error rates of in-plane spin-transfer-torque random access memory calculated from rare-event enhanced micromagnetic simulations, Journal of Magnetism and Magnetic Materials 467, 96, 2018.
- A. Roy, R. Ghosh, A. Rai, A. Sanne, K. Kim, H.C.P. Movva, R. Dey, T. Pramanik, S. Chowdhury, E. Tutuc, S. K. Banerjee, Intra-domain periodic defects in monolayer MoS2, Applied Physics Letters 110 (20), 201905, 2017.
- T. Pramanik, A. Roy, R. Dey, A. Rai, S. Guchhait, H.C.P. Movva, C-C Hsieh, S. K. Banerjee, Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy, Journal of Magnetism and Magnetic Materials 437, 72, 2017.
- R. Dey, A. Roy, T. Pramanik, A. Rai, S. H. Shin, S. Majumder, L. F. Register, S. K. Banerjee, Detection of current induced spin polarization in epitaxial Bi2Te3 thin film, Applied Physics Letters 110 (12), 122403, 2017.
- R. Dey, A. Roy, T. Pramanik, S. Guchhait, S. Sonde, A. Rai, L. F. Register, S. K. Banerjee, Localization and interaction effects of epitaxial Bi2Se3 bulk states in two-dimensional limit, Journal of Applied Physics 120 (16), 164301, 2016.
- U. Roy, T. Pramanik, L. F. Register, S. K. Banerjee, Write error rate of spin-transfer-torque random access memory including micromagnetic effects using rare event enhancement, IEEE Transactions on Magnetics 52 (10), 1, 2016.
- A. Roy, H.C.P. Movva, B. Satpati, K. Kim, R. Dey, A. Rai, T. Pramanik, S. Guchhait, E. Tutuc, S. K. Banerjee, Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy, ACS applied materials & interfaces 8 (11), 7396, 2016.
- T. Pramanik; U. Roy, L. F. Register, S. K. Banerjee, Proposal of a Multistate Memory Using Voltage Controlled Magnetic Anisotropy of a Cross-Shaped Ferromagnet, IEEE Transactions on Nanotechnology 14 (5), 883, 2015.
- U. Roy, R. Dey, T. Pramanik, B. Ghosh, L. F. Register, S. K. Banerjee, Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator., Journal of Applied Physics 117, 163906, 2015.
- A. Roy, S. Guchhait, R. Dey, T. Pramanik, C-C. Hsieh, A. Rai, S.K. Banerjee, Perpendicular magnetic anisotropy and spin glass-like behavior in molecular beam epitaxy grown chromium telluride thin films, ACS Nano 9 (4), 3772, 2015.
- R. Dey, T. Pramanik, A. Roy, A. Rai, S. Guchhait, S. Sonde, H.C.P. Movva, L. Colombo, L. F. Register, S. K. Banerjee, Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3, Applied Physics Letters 104, 223111, 2014.
- U. Roy, T. Pramanik, M. Tsoi, L. F. Register, and S. K. Banerjee, Micromagnetic study of spin-transfer-torque switching of a ferromagnetic cross towards multi-state spin-transfer-torque based random access memory, Journal of Applied Physics 113, 223904, 2013.
- A. Roy, S. Guchhait, S. Sonde, R. Dey, T. Pramanik, A. Rai, H.C.P. Movva, L. Colombo, S. K. Banerjee, Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si(111)-(7 × 7) surface by molecular beam epitaxy, Applied Physics Letters 102 (16), 163118, 2013.
- D. Banerjee, R.B.R. Adari, T. Pramanik, S. Ganguly, D. Saha, Effects of Device Geometry on Output Circular Polarization in a Spin-LED, IEEE Transactions on Magnetics 48 (11), 2761, 2012.
Conference Presentations/Posters:
- Guntas Kaur and Tanmoy Pramanik, Design Guidelines for Domain-Wall-Based-Synapse Devices – Thermal Stability and Depinning Current Requirements, accepted in IEEE Electron Devices Technology and Manufacturing (IEEE EDTM) Conference, Bengaluru, March, 2024.
- Sonalie Ahirwar and Tanmoy Pramanik, Write Error Rates of Field-Assisted Spin-Orbit-Torque Switching of Perpendicular Magnetic Tunnel Junctions, accepted in IEEE Electron Devices Technology and Manufacturing (IEEE EDTM) Conference, Bengaluru, March, 2024.
- Nisar, A., Kaushik, B. K., & Pramanik, T., Size dependence of domain wall mediated switching dynamics of perpendicular magnetic tunnel junctions in the presence of reference layer stray field, 68th Annual Conference on Magnetism and Magnetic Materials (MMM), Dallas, Oct., 2023.
- S. Ahirwar, T. Pramanik, A Simulation Study of Stand-By and Active Write Mode Magnetic Immunity of Perpendicular Spin-Transfer-Torque Random-Access Memory, IEEE International Conference on Emerging Electronics (ICEE), Bengaluru, Dec. 2022.
- Y-F Chang, I. Karpov, R. Hopkins, D. Janosky, J. Medeiros, B. Sherrill, J. Zhang, Y. Huang, T. Pramanik, A. Chen, T. Acosta, A. Guler, J. A. O'Donnell, P. A. Quintero, N. Strutt, O. Golonzka, C. Connor, J. C. Lee, J. Hicks, Embedded emerging memory technologies for neuromorphic computing: temperature instability and reliability, IEEE International Reliability Physics Symposium (IRPS), 2021.
- R. Grover, T. Acosta, E. Armagan, C. Auth, S. Chugh, K. Downes, M. Hattendorf, N. Jack, S. Joshi, R. Kasim, G. Leatherman, S.-H. Lee, C. Lin, A. Madhavan, H. Mao, A. Lowrie, G. Martin, G. McPherson, P. Nayak, A. Neale, D. Nminibapiel, B. Orr, J. Palmer, C. Pelto, S. S. Poon, I. Post, T. Pramanik, A. Rahman, S. Ramey, N. Seifert, K. Sethi, A. Schmitz, H. Wu, A. Yeoh, A Reliability Overview of Intel’s 10+ Logic Technology, IEEE International Reliability Physics Symposium (IRPS), 2020.
- J.G. Alzate, U. Arslan, P. Bai, J. Brockman, Y.-J. Chen, N. Das, K. Fischer, T. Ghani, P. Heil, P. Hentges, R. Jahan, A. Littlejohn, M. Mainuddin, D. Ouellette, J. Pellegren, T. Pramanik, C. Puls, P. Quintero, T. Rahman, M. Sekhar, B. Sell, M. Seth, A. Smith, A. Smith, L. Wei, C. Wiegand, O. Golonzka, F. Hamzaoglu, 2 MB Array-Level Demonstration of STT-MRAM Process and Performance Towards L4 Cache Applications, IEEE International Electron Devices Meeting (IEDM), 2019.
- J.A. O'Donnell, C. Connor, T. Pramanik, J. Hicks, J.G. Alzate, F. Hamzaoglu, J. Brockman, O. Golonzka, K. Fischer, eNVM MRAM Retention Reliability Modeling in 22FFL FinFET Technology, IEEE International Reliability Physics Symposium (IRPS), 2019.
- U. Roy, T. Pramanik, S. Roy, L.F. Register, S.K. Banerjee, Machine learning for variability aware statistical device design: The case of perpendicular spin-transfer-torque random access memory, 75th Annual Device Research Conference (DRC), 2017.
- T. Pramanik, L. F. Register, and S. K. Banerjee, Micromagnetic effects on the write error rates of in-plane and perpendicular spin-transfer-torque random access memory via rare-event-enhanced simulation, Semiconductor Research Corporation (SRC) TECHCON, Austin, Sept. 2017.
- T. Pramanik, U. Roy, L. F. Register, S. K. Banerjee, Write error rates of perpendicular spin-transfer-torque random access memory including micromagnetic effects, 61st Annual Conference on Magnetism and Magnetic Materials (MMM), New Orleans, Nov. 2016.
- T. Pramanik, U. Roy, L. F. Register, S. K. Banerjee, Write Error Rate of Spin-transfer-torque Random Access Memory Including Micromagnetic Effects Using Rare Event Enhancement, Semiconductor Research Corporation (SRC) TECHCON, Austin, Sept. 2016.
- U. Roy, D.L. Kencke, T. Pramanik, L.F. Register, S.K. Banerjee, Write error rate in spin-transfer-torque random access memory including micromagnetic effects, 73rd Annual Device Research Conference (DRC), 2015.
- T. Pramanik, U. Roy, L. F. Register, M. Tsoi, and S. K. Banerjee, Micromagnetic simulations of spin-wave normal modes and the spin-transfer-torque driven magnetization dynamics of a ferromagnetic cross, Journal of Applied Physics, 115, 17D123, 2014, Proceedings of 58th Annual Conference of Magnetism and Magnetic Materials (MMM).
- 10. T. Pramanik, U. Roy, N. Asoudegi, L. F. Register and S. K. Banerjee, Proposal of a multi-state memory using voltage controlled magnetic anisotropy of a cross-shaped ferromagnet, 32nd International Conference on the Physics of Semiconductors, Austin, August, 2014.
- T. Pramanik, U. Roy, L. F. Register1, M. Tsoi, S. K. Banerjee, Micromagnetic study of spin–transfer-torque switching of a ferromagnetic cross towards multi-state spin-transfer-torque based random access memory, Semiconductor Research Corporation (SRC) TECHCON, Austin, Sept. 2013.
- S. Ganguly, T. Pramanik, and D. Saha, Effect of holes and electric fields on spin injection and transport through ferromagnet/semiconductor junction, Presented at 4th WUN International Conference on Spintronics, Sydney, 2012.
Patents:
- D. Ouellette, C. Wiegand, J. Brockman, T. Rahman, O. Golonzka, A. Smith, A. Smith, J. Pellegren, A. Littlejohn, J. G. Alzate-Vinasco, Y-J. Chen, T. Pramanik, Intel Corporation, Magnetic memory devices and methods of fabrication. U.S. Patent Application 16/706,470, filed June 10, 2021.