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Sanjeev Manhas

Sanjeev Manhas


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3D NAND, FeFET and nanoscale DRAM, Neuromorphic and In-Memory Computing, Nanoscale Transistors and Circuit Design, MEMS Energy Harvesting and Sensors, CMOS Reliability

Degree Subject University Year Studied
Ph. D. Electronics and Electrical Engineering De Montfort University, Leicester, UK 2003
M. Tech. Solid State Technology IIT Madras 1996
From To Designation Organisation Level
2015 2019 Faculty-in-Charge, TIDES Business Incubator IIT Roorkee
2015 2017 Chairman, Departmental Faculty Research Committee IIT Roorkee
2015 2019 Faculty-in-Charge, STEP IIT Roorkee
2016 2018 Chairman, Departmental Academic Programme Committee (DAPC) IIT Roorkee
Scheme Sponsoring Agency Other Faculties Year Sponsored
FeFET TCAD for Interface Engineering Applied Materials, USA 2019
Non-filamentary three-Terminal Memristor Architecture for Bio-mimetic and Logic Design MHRD (SPARC) 2019
TCAD for DRAM and 3D NAND Applied Materials, USA 2018
DIC PhD Fellowship DIC 2018
Implementation of TIDE Scheme for Entrepreneurship Development MeitY 2015
Scheme of Financial Assistance for Setting up of Electronics and ICT Academies, DeitY MeitY 2016
Establishment of Technology Business Incubator at IIT Roorkee DST 2017
Investigation of Silicon Nanowire FET Reliability and its Modeling DST 2012
FIST (Profilometer and PECVD systems for Microelectronics Lab) DST 2016
Development of Microfluidics Based Device to Detect CTCs SMILE 2017
Design and Development of Carbon Nanotubes Based Chemical Sensor DRDO 2011
Si Nanowire CMOS for Ultra High Density Circuits FIG 2009
Characterization of Channel Mobility in 3D NAND Applied Materials USA 2020
Membership Details
IEEE Electron Device Society, Member
IEEE Solid State Circuits Society, Member
Title Course Code Course Semester
Fundamentals of Microelectronics EC 344 UG Spring
Analog Circuits EC 205 UG Autumn
Semiconductor Devices EC242 UG Autumn
Analog Electronics EC 205 UG Autumn
Fundamentals of Electronics EC 102 UG Autumn
MOS Device Physics EC 571 PG Autumn
VLSI Technology EC 555 PG Spring
Nanoscale Transistors EC 587 PG Spring
Digital Circuits EC 203 UG Autumn
Compound Semiconductor Devices EC 559 PG Spring
Technology of Nanostructured Fabrication NT 511 PG Autumn
Topic Scholar Name Status of PhD Registration Year
Analysis of Si-nanowire GAA MOSFET and its Implementation in Logic Design Gaurav Kaushal A 2008
Performance Models for Nanoscale VLSI Circuits Baljit Kaur A 2009
Vertical Nanowire Based CMOS Circuit Design Maheshwaram Satish A 2010
Carbon Nanotube Interconnects for VLSI Manoj Kumar Majumder A 2010
Concurrent Multi-band Oscillators for Multifunctional Wireless Systems L Snehalatha A 2011
Silicon Nanowire Based Circuit Design and NBTI Reliability Om Prakash A 2013
Fabrication and Characterization of Vibrational Energy Harvesters Sandeep Singh Chauhan A 2013
Carbon Nanotube Devices for Sensor Applications Narendra Kumar O 2014
Charge Trap Based SONOS/MONOS Devices for 3D NAND Flash Memory Applications Upendra Mohan Bhatt A 2014
Design, Analysis and Optimization of DRAM Transistor Satendra Kumar Guatam A 2015
Reliability of Gallium-Nitride Based High Electron Mobility Transistors and Circuits Sourabh Jindal O 2015
Nanomaterials Based Biosensors for detection of pathogens and Small Molecules Pardeep Kumar O 2015

Selected Publications 

  1. Rangadhar Pradhan, Sanjana Afrin Raisa, Pramod Kumar, Ashish Kalkal, Narendra Kumar, Gopinath Packirisamy, Sanjeev Manhas, “Optimization, fabrication, and characterization of four electrode-based sensors for blood impedance measurement”, Biomedical Microdevices 23 (1), 1-9, 2021.
  2. S Jindal, SK Manhas, SK Gautam, S Balatti, A Kumar, M Pakala, “Investigation of Gate-Length Scaling of Ferroelectric FET”, IEEE Transactions on Electron Devices 68 (3), 1364-1368, 2021.
  3. R Pradhan, A Kalkal, S Jindal, G Packirisamy, S Manhas, “Four electrode-based impedimetric biosensors for evaluating cytotoxicity of tamoxifen on cervical cancer cells”, RSC Advances 11 (2), 798-806, 2021.
  4. SK Gautam, SK Manhas, A Kumar, M Pakala, “Mitigating the Passing Word Line Induced Soft Errors in Saddle Fin DRAM”, IEEE Transactions on Electron Devices 67 (4), 1902-190, 2020.
  5. Om Prakash, Hussam Amrouch, Sanjeev Manhas, Jörg Henkel, “Impact of NBTI aging on self-heating in nanowire FET”, IEEE Design, Automation & Test in Europe Conference & Exhibition (DATE), 1514-1519, 2020.
  6. SS Chauhan, UM Bhatt, P Gautam, S Thote, MM Joglekar, SK Manhas, “Fabrication and modeling of β-phase PVDF-TrFE based flexible piezoelectric energy harvester”, Sensors and Actuators A: Physical 304, 111879, 2020.
  7. UM Bhatt, SK Manhas, A Kumar, M Pakala, E Yieh, “Mitigating the impact of channel tapering in vertical channel 3-D NAND”, IEEE Transactions on Electron Devices 67 (3), 929-936, 2020.
  8. N. Kumar, N. K. Navani, and S. K. Manhas, “Altering the Schottky Barrier Height and Conductance by Using Metal Nanoparticles in Carbon Nanotubes-Based Devices,” IEEE Trans. Electron Devices, vol. 66, no. 6, pp. 2789–2794, 2019.
  9. S. K. Gautam, S. K. Manhas, A. Kumar, M. Pakala and E. Yieh, "Row Hammering Mitigation Using Metal Nanowire in Saddle Fin DRAM," in IEEE Transactions on Electron Devices (Published , July 2019.) doi: 10.1109/TED.2019.2931347     
  10. Sandeep Singh Chauhan, M.M Joggler, S.K. Manhas, "High Power Density CMOS Compatible Micro- machined MEMs Energy Harvester" IEEE Sensor Journal, (Published as an early access in IEEE explore, June 2019.)
  11. S. K. Gautam, A. Kumar, and S. K. Manhas, "Improvement of Row Hammering Using Metal Nanoparticles in DRAM—A Simulation Study,” IEEE Electron Device Letters, vol. 39, pp. 1286-1289, 2018.
  12. S. S. Chauhan, M. Joglekar, and S. K. Manhas, "Influence of Process Parameters and Formation of Highly c-Axis Oriented AlN Thin Films on Mo by Reactive Sputtering," IEEE/TMS Journal of Electronics Material, Vol. 47, no. 12, pp-7520-7530, 2018.
  13. S. S. Chauhan, M. Joglekar, and S. K. Manhas, "Fabrication of Cantilever MEMs structure of C-axis Grown AlN film for Energy Harvester Application," Proc EEE International Conference on Industrial Technology (ICIT), Lyon, France, vol. 300, p. 200, 2018.
  14. U. M. Bhatt, A. Kumar, and S. K. Manhas, "Performance Enhancement by Optimization of Poly Grain Size and Channel Thickness in a Vertical Channel 3-D NAND Flash Memory," IEEE Transactions on Electron Devices, vol. 65, pp. 1781-1786, 2018.
  15. O. Prakash, S. Maheshwaram, M. Sharma, A. Bulusu, and S. K. Manhas, "Performance and Variability Analysis of SiNW 6T-SRAM Cell Using Compact Model With Parasitics,” IEEE Transactions on Nanotechnology, vol. 16, pp. 965-973, 2017.
  16. O. Prakash, S. Beniwal, S. Maheshwaram, A. Bulusu, N. Singh, and S. Manhas, "Compact NBTI Reliability Modeling in Si Nanowire MOSFETs and Effect in Circuits," IEEE Transactions on Device Materials Reliability, vol. 17, pp. 404-413, 2017.
  17. A. Pandey, H. Kumar, S. Manhas, S. Dasgupta, and B. Anand, "Atypical Voltage Transitions in FinFET Multistage Circuits: Origin and Significance," IEEE Transactions on Electron Devices, vol. 63, pp. 1392-1396, 2016.
  18. A. Joshi, S. Manhas, S. K. Sharma, and S. Dasgupta, "An 8 bit, 100 kS/s, switch-capacitor DAC SAR ADC for RFID applications," Microelectronics Journal, vol. 46, pp. 453-461, 2015.
  19. R. Shankar, G. Kaushal, S. Maheshwaram, S. Dasgupta, and S. Manhas, "A degradation model of double gate and gate-all-around MOSFETs with interface trapped charges including effects of channel mobile charge carriers," J IEEE transactions on Device Materials Reliability, vol. 14, pp. 689-697, 2014.
  20. A. Pandey, S. Raycha, S. Maheshwaram, S. K. Manhas, S. Dasgupta, A. K. Saxena, and B. Anand, "Effect of load capacitance and input transition time on FinFET inverter capacitances," J IEEE Transactions on Electron Devices, vol. 61, pp. 30-36, 2014.
  21. M. K. Majumder, B. K. Kaushik, and S. K. Manhas, "Analysis of delay and dynamic crosstalk in bundled carbon nanotube interconnects," IEEE Transactions on Electromagnetic Compatibility, vol. 56, pp. 1666-1673, 2014.
  22. A. Kumar, V. Kumar, S. Agarwal, A. Basak, N. Jain, A. Bulusu, and S. Manhas, "Nitrogen-terminated semiconducting zigzag GNR FET with negative differential resistance," IEEE Transactions on Nanotechnology, vol. 13, pp. 16-22, 2014.
  23. G. Kaushal, S. Manhas, S. Maheshwaram, B. Anand, S. Dasgupta, and N. Singh, "Novel Design Methodology Using Lext Sizing in Nanowire CMOS Logic," IEEE Transactions on Nanotechnology, vol. 13, pp. 650-658, 2014.
  24. B. Kaur, N. Alam, S. Manhas, and B. Anand, "Efficient ECSM Characterization Considering Voltage, Temperature, and Mechanical Stress Variability," IEEE Trans. on Circuits Systems, vol. 61, pp. 3407-3415, 2014.
  25. N. Jain, S. Manhas, A. Aggarwal, and P. Chaudhry, "Effect of metal contact on CNT based sensing of NO2 molecules," in Physics of Semiconductor Devices, ed: Springer, Cham, 2014, pp. 637-639.
  26. S. Maheshwaram, S. Manhas, G. Kaushal, B. Anand, and N. Singh, "Vertical nanowire CMOS parasitic modeling and its performance analysis," IEEE Transactions on Electron Devices, vol. 60, pp. 2943-2950, 2013.
  27. M. K. Majumder, N. D. Pandya, B. Kaushik, and S. Manhas, "Analysis of MWCNT and bundled SWCNT interconnects: Impact on crosstalk and area," IEEE Electron Device Letters, vol. 33, pp. 1180-1182, 2012.
  28. S. Maheshwaram, S. Manhas, G. Kaushal, B. Anand, and N. Singh, "Device circuit co-design issues in vertical nanowire CMOS platform," IEEE Electron Device Letters, vol. 33, pp. 934-936, 2012.
  29. G. Kaushal, S. Manhas, S. Maheshwaram, S. Dasgupta, B. Anand, and N. Singh, "Tuning source/drain extension profile for current matching in nanowire CMOS logic," IEEE Transactions on Nanotechnology, vol. 11, pp. 1033-1039, 2012.
  30. S. Manhas, N. Singh, and G. Lo, "Barrier layer thickness analysis for reliable copper plug process in CMOS technology," J Microelectronics Reliability, vol. 51, pp. 1365-1371, 2011.
  31. S. Maheshwaram, S. Manhas, G. Kaushal, B. Anand, and N. Singh, "Vertical silicon nanowire gate-all-around field effect transistor based nanoscale CMOS," IEEE Electron Device Letters, vol. 32, pp. 1011-1013, 2011.
  32. N. Singh, K. D. Buddharaju, S. Manhas, A. Agarwal, S. C. Rustagi, G. Lo, N. Balasubramanian, and D.-L. Kwong, "Si, SiGe nanowire devices by top–down technology and their applications," IEEE Transactions on Electron Devices, vol. 55, pp. 3107-3118, 2008.
  33. M. M. De Souza, S. Manhas, D. C. Sekhar, A. Oates, and P. Chaparala, "Influence of mobility model on extraction of stress dependent source–drain series resistance," Microelectronics Reliability, vol. 44, pp. 25-32, 2004.
  34. G. Cao, S. Manhas, E. S. Narayanan, M. De Souza, and D. Hinchley, "Comparative study of drift region designs in RF LDMOSFETs," IEEE Transactions on Electron Devices, vol. 51, pp. 1296-1303, 2004.
  35. S. Manhas, D. C. Sehkar, A. Oates, and M. M. De Souza, "Characterisation of series resistance degradation through charge pumping technique," Microelectronics Reliability, vol. 43, pp. 617-624, 2003.
  36. S. Manhas, M. M. De Souza, and A. S. Oates, "Quantifying the nature of hot carrier degradation in the spacer region of LDD nMOSFETs," IEEE transactions on device materials reliability, vol. 1, pp. 134-143, 2001.
  37. M. M. De Souza, J. Wang, S. Manhas, E. S. Narayanan, and A. Oates, "A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors," Microelectronics Reliability, vol. 41, pp. 169-177, 2001.
  38. S. Manhas, D. C. Sekhar, A. Oates, and M. De Souza, "Nature of hot carrier damage in spacer oxide of LDD n-MOSFETs," in Microelectronics, 2002. MIEL 2002. 23rd International Conference on, 2002, pp. 735-739.
  39. S. Manhas, M. De Souza, A. Oates, and Y. Chen, "Impact of oxide degradation on universal mobility behaviour of n-MOS inversion layers," in Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the, 2002, pp. 227-231.
  40. S. Manhas, M. De Souza, A. Gates, S. Chetlur, and E. S. Narayanan, "Early stage hot carrier degradation of state-of-the-art LDD N-MOSFETs," in Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International, 2000, pp. 108-111.
  41. S. Maheshwaram, O. Prakash, M. Sharma, A. Bulusu, and S. Manhas, "Vertical Nanowire FET Based Standard Cell Design Employing Verilog-A Compact Model for Higher Performance," in International Symposium on VLSI Design and Test, 2017, pp. 239-248.
  42. O. Prakash, S. Maheshwaram, M. Sharma, A. Bulusu, A. Saxena, and S. Manhas, "A unified Verilog-A compact model for lateral Si nanowire (NW) FET incorporating parasitics for circuit simulation," in 2016 20th International Symposium on VLSI Design and Test (VDAT), 2016, pp. 1-6.
  43. S. Gautam, S. Maheshwaram, S. Manhas, A. Kumar, S. Sherman, and S. H. Jo, "Reduction of GIDL Using Dual Work-Function Metal Gate in DRAM," in Memory Workshop (IMW), 2016 IEEE 8th International, 2016, pp. 1-4.
  44. M. Sharma, S. Maheshwaram, O. Prakash, A. Bulusu, A. Saxena, and S. Manhas, "Compact model for vertical silicon nanowire based device simulation and circuit design," in SoC Design Conference (ISOCC), 2015 International, 2015, pp. 107-108.
  45. S. Maheshwaram, S. Manhas, and B. Anand, "Vertical nanowire transistor-based CMOS: VTC analysis," in Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on, 2014, pp. 1-4.
  46. S. Maheshwaram, S. Manhas, G. Kaushal, and B. Anand, "Vertical nanowire MOSFET parasitic resistance modeling," in Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of, 2013, pp. 1-2.
  47. G. Kaushal, S. Maheshwaram, S. Dasgupta, and S. Manhas, "Drive matching issues in multi gate CMOS inverter," in Signal Processing and Communication (ICSC), 2013 International Conference on, 2013, pp. 349-354.
  48. H. Zhao, S. Rustagi, N. Singh, F.-J. Ma, G. Samudra, K. Budhaaraju, S. Manhas, C. Tung, G. Lo, and G. Baccarani, "Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport," in Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 2008, pp. 1-4.
  49. S. KManhas, M Chen, K D Buddharaju, H Y Li, R Murthy, S Balakumar, N singh, G Q Lo and D L Kwong, “Copper Plug Barrier Process Optimization for Reliable Transistor Performance,” International Symp on Solid State Circuits and Materials (SSDM 2008), 23 - 26 Sep, p. 390, 2008, Japan
  50. A. Basak, S. Manhas, G. Kapil, S. Dasgupta, and N. Jain, "A Simulation Study of the Effect of Platinum Contact on CNT Based Gas Sensors Using Self-Consistent Field with NEGF Method," in Int. Conf. on Semiconductor Processes and Devices (SISPAD), USA, 2012.
  51. S. Maheshwaram, G. Kaushal, and S. Manhas, "A high performance vertical Si nanowire CMOS for ultra high density circuits," in Circuits and Systems (APCCAS), 2010 IEEE Asia Pacific Conference on, 2010, pp. 1219-1222.



  1. S K Manhas, S Nema, Dr A Bulusu, “A method of fabricating dual/asymmetric dielectric constant (dual-K) spacers in MOSFET,” No R20161028626, 2012 (filed), IIT Roorkee.
  2. S. K. Manhas, G. Kaushal, Anand Bulusu, “A Design Methodology using Extension Length (LEXT) Sizing in Nanowire CMOS Logic,” approved for filing by IP cell IIT Roorkee.
  3. Arvind KUMAR, Mahendra PAKALA, and Satendra Kumar GAUTAM, Sanjeev MANHAS, “DRAM AND METHOD OF MAKING,” US Patent App. 16/931,154, 2020.
  4. Sandeep Chauhan, S K Manhas, Manish Joglekar, “CMOS Compatible Micro-machined Piezoelectric Energy Harvester.” Appl no 201911020224, 2019 (Filed).
  5. A Kumar, S Manhas, M Pakala, EY Yi, “Vertical transistor fabrication for memory applications”, US Patent App. 16/519,246 2021. 

Total Citations