Gallium nitride
Our group is actively involved in understanding the physical mechanisms governing the high electron mobility transistors (HEMTs). In particular, we are investigating AlGaN/GaN and InAlN/GaN HEMTs that are potential candidates to construct radio frequency (RF) electronic circuits for future 5G communications, defense, and space applications.
Gallium Oxide
Gallium oxide (Ga2O3) has emerged as a potential candidate to realize power electronic devices. Due to a large bandgap (~4.9 eV) and a large critical electric field (~8 MeV/cm), Ga2O3 devices are promising to extend the Baliga figure-of-merit beyond SiC and GaN. We are actively involved in achieving near-ideal and near-homogeneous Ga2O3 devices for future high power applications.
Aluminum Gallium Nitride and Aluminum Nitride
Aluminum Gallium Nitride (AlGaN) and Aluminum Nitride (AlN) semicondcutors are useful in realizing deep-UV light emitters and solar-blind photodetectors. They are also under development for future power electronics. We are currently collaborating with several research groups in exploring the AlGaN and AlN based devices.
