List of Publications

Journals :

  1. S. Mukhopadhyay, L. A. M. Lyle, H. Pal, K. K. Das, L. M. Porter and B. Sarkar, “Evidence of thermionic emission in forward biased β-Ga2O3 Schottky diodes at Boltzmann doping limit,” Journal of Applied Physics, 131, 025702, 2022.
  2. A. Jadhav, P. Bagheri, A. Klump, D. Khachariya, S. Mita, P. Reddy, S. Rathkanthiwar, R. Kirste, R. Collazo, Z. Sitar, and B. Sarkar, “On Electrical Analysis of Al-rich p-AlGaN films for III-nitride UV light emitters,” Semiconductor Science and Technology, 37, 015003, 2022.
  3. S. Mukhopadhyay, H. Pal, S. R. Narang, C. Guo, J. Ye, W. Guo and B. Sarkar, “Self-powered ultraviolet photodiode based on lateral polarity structure GaN films” Journal of Vacuum Science and Technology B, 39, 052206, 2021.
  4. A. Jadhav, T. Ozawa, A. Baratov, J. T. Asubar, M. Kuzuhara, A. Wakejima, S. Yamashita, M. Deki, Y. Honda, S. Roy, H. Amano and B. Sarkar, “Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs,”IEEE Journal of Electron Device Society, vol. 9, pp. 570-581, 2021.
  5. A. Jadhav, L. A. M. Lyle, Z. Xu, K. K. Das, L. M. Porter and B. Sarkar, “Temperature Dependence of Barrier Height Inhomogeneity in β-Ga2O3 Schottky Barrier Diodes,” Journal of Vacuum Science and Technology B, 39, 040601, 2021.
  6. A. Jadhav, Y. Dai, P. Upadhyay, W. Guo and B. Sarkar, “Role of Interface Induced Gap States in Polar AlxGa1−xN (0 ≤ x ≤ 1) Schottky Diodes,” Journal of Electronic Materials, vol. 50, pp. 3731–3738, 2021.
  7. A. Jadhav, T. Ozawa, A. Baratov, J. T. Asubar, M. Kuzuhara, A. Wakejima, S. Yamashita, M. Deki, S. Nitta, Y. Honda, H. Amano, S. Roy and B. Sarkar, “Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs using Rational Functions and Additional Passive Circuit Elements” IEEE Transactions on Electron Devices, vol. 68, issue 12, pp. 6059-6064, 2021. 

Conferences :

  1. H. Pal, C. Guo, J. Ye, W. Guo and B. Sarkar, “Self-powered ultraviolet photodiodes using laterally varying polarity (Al)GaN films,” MRS Spring Meeting 2022, USA.
    *This paper was accepted for MRS Fall Meeting 2021, but had to shift to 2022 due to the ongoing pandemic.
  2. B. Sarkar, A. Jadhav, S. Yamashita, M. Deki and H. Amano, “(Invited) Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs,” International Symposium on Advanced Plasma Science (IS-Plasma) 2022, Japan.
  3. A. Jadhav, T. Ozawa, A. Baratov, J. T. Asubar, M. Kuzuhara, A. Wakejima, S. Yamashita, M. Deki, S. Nitta, Y. Honda, S. Roy, H. Amano and B. Sarkar, “A current source based small signal model for AlGaN/GaN MOS-HEMT,” International Symposium on Advanced Plasma Science (IS-Plasma) 2022, Japan.
  4. B. Sarkar, “(Invited) Laterally varying polarity GaN devices,” IEEE-EDS Workshop on Devices and Circuits (WDC) 2022, India.
  5. B Sarkar, “Laterally Varying Polarity GaN Films: Growth, Processing and Applications,” International Workshop on Physics of Semiconductor Devices (IWPSD) 2021, India.
  6. S. Mukhopadhyay and B. Sarkar, “Insight of Impact Ionization and Breakdown Characteristic Variation in n-GaN and Undoped AlGaN/GaN Schottky Barrier Diodes,” International Workshop on Physics of Semiconductor Devices (IWPSD) 2019, India.