Background

We are a small research group trying to explore wide bandgap compound semiconductor devices. Our work is predominantly on nitride semiconductors, but we have also started exploring several ultra-wide bandgap semiconductors like Gallium oxide, Aluminum Gallium Nitride, Aluminum Nitride, etc. Our target applications include light emitting diodes (LEDs), laser diodes, photodetectors, solar cells, high-power and high-speed (RF) electronics devices. 

We are always  looking for bright and motivated students to join our journey. If you are interested to join us, kindly apply for the PhD admission at IIT Roorkee (portal link can be found here: link). In your research statement or statement of purpose, highlight your research interest. Unfortunately, we do not entertain personal emails regarding admission as of now. 

News & Highlights

  • GaN power devices market to grow 73% to USD 83 million in 2021 – Trendforce experts.
  •  EPC announces new book: “GaN Power Devices and Applications”. This book focuses on GaN FETs and ICs for LiDAR, DC-to-DC converters, motor drives, etc. Link
  • Transphorm wins a USD 1.4 million contract to develop N-polar GaN devices for mm-wave applications.
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Photodiodes

Our group is actively involved in demonstrating compound semiconductor based photodiodes for applications like THz imaging, UV sensing, flame detection, etc. In parallel, we are also exploring highly efficient solar cells using nitride semiconductors.

Nitride light emitters

One of our core research focus is to develop high quality quantum wells, contact metallization schemes and cladding layers for highly efficient ultra-violet light emitters (LEDs and laser diodes).

RF Devices

Some of our group members are exploring RF devices made up of AlGaN/GaN HEMTs. We are developing precise small signal models that can faithfully capture AlGaN/GaN HEMTs in mm-wave regime. Alongside, we are also developing predictive models that can assist the variability-aware RF circuit design.

Power Devices

Our research group is actively involved in making power electronic devices like Schottky diodes, field effect transistors, superjunction devices, etc.

Why to join us

We are one of the oldest Technical Institute of ASIA

Established in 1847, IIT Roorkee is India’s oldest technological institute, and also enlisted as one of the oldest technical institute of Asia. This institute already has a legacy of 175 years. Our research group is focused to ameliorate the vast reputation by involving ourselves to cutting-edge research topics. 

We work on multiple emerging technologies

Gone are the days known for Jack of all trades and master of one. In today’s era, every technical expert need to have strong knowledge of multiple emerging technologies, no easy escape. Fast pace of technology development brings a disruptive market scenario in a very short notice. We at Wide Bandgap Semiconductor Laboratory are prepared for any disruptive technology that may emerge tomorrow. We are also preparing the next generation to align with the pace of technology. 

Industrial/Academic Tie-ups

All our research areas are of prime interest to the industrial partners. We believe our knowledge generation through research must translate into useful products for the society. Thus, we maintain a healthy industry-academia relation that serves as a win-win scenario for both us and the industry. We get the benefit of aligning our research with the industry needs, whereas our Industry partners get the benefit of our knowledge and human resources.