Education:

Work Experience:

Assistant Professor, IIT Roorkee [Dec 2018 – Present]
Research areas: GaN and AlGaN based power electronic devices, RF devices, LEDs and photodiodes.
Courses Offered: Fundamentals of Electronics (ECN-102), Foundations of Semiconductor Device Physics (ECN-579), Compound Semiconductor Devices and Circuit (ECN-359).

Assistant Professor, IIT (ISM) Dhanbad [Nov 2017 – Dec 2018]
(i) Engaged in teaching courses and research in nitride electronic devices.

(ii)Served as visiting faculty at NC State University, may-July 2018.

Journal Publications:

1. A. Jadhav, T. Ozawa, A. Baratov, J. T. Asubar, M. Kuzuhara, A. Wakejima, S. Yamashita, M. Deki, S. Nitta, Y. Honda, H. Amano, S. Roy and B. Sarkar, “Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs using Rational Functions and Additional Passive Circuit Elements” IEEE Transactions on Electron Devices, Early access, 2021. DOI: 10.1109/TED.2021.3119528
2. A. Jadhav, T. Ozawa, A. Baratov, J. T. Asubar, M. Kuzuhara, A. Wakejima, S. Yamashita, M. Deki, Y. Honda, S. Roy, H. Amano and B. Sarkar, “Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs,” IEEE Journal of Electron Device Society, vol. 9, pp. 570-581, 2021.
3. A. Jadhav, P. Bagheri, A. Klump, D. Khachariya, S. Mita, P. Reddy, S. Rathkanthiwar, R. Kirste, R. Collazo, Z. Sitar, and B. Sarkar, “On Electrical Analysis of Al-rich p-AlGaN films for III-nitride UV light emitters,” Semiconductor Science and Technology, in press, 2021. DOI: https://doi.org/10.1088/1361-6641/ac3710
4. A. Jadhav, L. A. M. Lyle, Z. Xu, K. K. Das, L. M. Porter and B. Sarkar, “Temperature Dependence of Barrier Height Inhomogeneity in β-Ga2O3 Schottky Barrier Diodes,” Journal of Vacuum Science and Technology B, vol. 39, issue. 040601, 2021. Special recognition: Editors Pick for the journal.
5. A. Jadhav, Y. Dai, P. Upadhyay, W. Guo and B. Sarkar, “Role of Interface Induced Gap States in Polar AlxGa1−xN (0 ≤ x ≤ 1) Schottky Diodes,” IEEE/TMS Journal of Electronic Materials, vol. 50, pp. 3731–3738, 2021.
6. S. Mukhopadhyay, H. Pal, S. R. Narang, C. Guo, J. Ye, W. Guo and B. Sarkar, “Self-powered ultraviolet photodiode based on lateral polarity structure GaN films” Journal of Vacuum Science and Technology B, vol. 39, issue. 052206, 2021.
7. M. Breckenridge, P. Bagheri, Q. Guo, B. Sarkar, D. Khachariya, S. Pavlidis, J. Tweedie, R. Kirste, S. Mita, P. Reddy, R. Collazo and Z. Sitar, “High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN,” Applied Physics Letters, 118, 112104, 2021.
8. R. Kirste; B. Sarkar; P. Reddy; Q. Guo; R. Collazo and Z. Sitar, “Status of the Growth and Fabrication of AlGaN based UV laser diodes for near and mid UV wavelength,” Journal of Materials Research, (in print), 2021.
9. B. Sarkar and R. Collazo, “Ch.7 – Doping of AlGaN” in H. Amano, et. al. “The 2020 UV Emitter Roadmap” Journal of physics D: Applied Physics, vol. 50, issue. 503001, 2020.
10. H. Xu, J. Jiang, Y. Dai, M. Cui, K. Li, X. Ge, J. Hoo, L. Yan, S. Guo, J. Ning, H. Sun, B. Sarkar, W. Guo and J. Ye, “Polarity Control and Nanoscale Optical Characterization of AlGaN-based Multiple Quantum Wells for Ultraviolet C emitters,” ACS Applied Nano Materials, vol. 3, pp. 5335–5342, 2020.
11. P. Bagheri, R. Kirste, P. Reddy, S. Washiyama, S. Mita, B. Sarkar, R. Collazo, and Z. Sitar, “The nature of the DX state in Ge-doped AlGaN,” Applied Physics Letters, vol 116, issue. 222102, 2020.
12. M. H. Breckenridge, Q. Guo, A. Klump, B. Sarkar, Y. Guan, J. Tweedie, R. Kirste, S. Mita, P. Reddy, R. Collazo and Z. Sitar, “Shallow Si donor in ion-implanted homoepitaxial AlN,” Applied Physics Letters, vol. 116, issue. 172103, 2020.
13. P. Reddy, D. Khachariya, D. Szymanski, M. H. Breckenridge, B. Sarkar, S. Pavlidis, R. Collazo, Z. Sitar and E. Kohn, “Role of polarity in SiN on Al/GaN and the pathway to stable contacts,” Semiconductor Science and Technology, vol. 35, issue. 055007, 2020.
14. S. Washiyama, P. Reddy, B. Sarkar, M. H. Breckenridge, Q. Guo, P. Bagheri, A. Klump, R. Kirste, J. Tweedie, S. Mita, Z. Sitar and R. Collazo, “The role of chemical potential in compensation control in Si: AlGaN,” Journal of Applied Physics, vol. 127, issue. 105702, 2020.
15. A. Ray, S. Bordoloi, B. Sarkar, P. Agarwal and G. Trivedi, “Numerical Simulation of Enhanced-Reliability Filleted-Gate AlGaN/GaN HEMT,” IEEE/TMS Journal of Electronic Materials, vol. 49, no. 3, pp. 2018-2031, 2020.
16. B. Sarkar, P. Reddy, A. Klump, F. Kaess, R. Rounds, R. Kirste, S. Mita, E. Kohn, R. Collazo and Z. Sitar, “On Ni/Au alloyed contacts to Mg-doped GaN,” IEEE/TMS Journal of Electronic Materials, vol. 47, pp. 305-311, 2018.
17. B. Sarkar, S. Mills, B. Lee, W. S. Pitts, V. Misra and P. D. Franzon, “On Using the Volatile Mem-capacitive Effect of TiO2 RRAM to Mimic the Synaptic Forgetting Process,” IEEE/TMS Journal of Electronic Materials, vol. 47, pp. 994-997, 2018.
18. B. Sarkar, S. Washiyama, M. H. Breckenridge, A. Klump, J. N. Baker, P. Reddy, J. Tweedie, S. Mita, R. Kirste, D. L. Irving, R. Collazo and Z Sitar, “(Invited) N- and P- type Doping in Al-rich AlGaN and AlN,” ECS Transactions, vol. 86, no. 12, pp. 25-30, 2018.
19. R. Rounds, B. Sarkar, T. Sochacki, M. Bockowski, M. Imanishi, Y. Mori, R. Kirste, R. Collazo and Z. Sitar, “Thermal Conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes,” Journal of Applied Physics, 124, 105106, 2018.
20. R. Rounds, B. Sarkar, D. Alden, Q. Guo, A. Klump, C. Hartmann,T. Nagashima, R. Kirste, A. Franke, M. Bickermann, Y. Kumagai, Z. Sitar and R. Collazo, “The influence of point defects on the thermal conductivity of AlN crystals,” Journal of Applied Physics, 123, 185107, 2018.
21. R. Kirste, Q. Guo, J. H. Dycus, A. Franke, S. Mita, B. Sarkar, P. Reddy, J. M. LeBeau, R. Collazo and Z. Sitar, “6 kW/cm2 UVC laser threshold in optically pumped lasers by controlling point defect formation,” Applied Physics Express, 11, 082101, 2018.
22. I. Bryan, Z. Bryan, S. Washiyama, P. Reddy, B. E. Gaddy, B. Sarkar, M. H. Breckenridge, Q. Guo, M. Bobea, J. Tweedie, S. Mita, D. L. Irving, R. Collazo and Z. Sitar, “Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD,” Applied Physics Letters, 112, 062102, 2018.
23. R. Rounds, B. Sarkar, A. Klump, C. Hartmann, T. Nagashima, R. Kirste, A. Franke, M. Bickermann, Y. Kumagai, Z. Sitar and R. Collazo, “The thermal conductivity of single crystalline AlN,” Applied Physics Express, 11, 071101, 2018.
24. P. Reddy, S. Washiyama, W. Mecouch, L. Hernandez-Balderrama, F. Kaess, M. H. Breckenridge, B. Sarkar, B. Haidet, A. Franke, E. Kohn, R, Collazo and Z. Sitar, “Plasma Enhanced Chemical Vapor Deposition of SiO2 and SiNX on AlGaN: Band offsets and interface states as a function of Al composition,” Journal of Vacuum Science and Technology A, 36, 061101, 2018.
25. B. Sarkar, S. Mita, P. Reddy, A. Klump, F. Kaess, J. Tweedie, I. Bryan, Z. Bryan, R. Kirste, E. Kohn, R. Collazo and Z. Sitar, “High free carrier concentration in p-GaN grown on AlN substrates,” Applied Physics Letters, 111, 032109, 2017.
26. B. Sarkar, B. B. Haidet, P. Reddy, R. Kirste, R. Collazo and Z. Sitar, “Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate by reactive ion etching surface treatment,” Applied Physics Express, 10, 071001, 2017.
27. B. Sarkar, P. Reddy, F. Kaess, B. B. Haidet, J. Tweedie, S. Mita, R. Kirste, E. Kohn, R. Collazo and Z. Sitar, “(Invited) Material considerations for the development of III-nitride power devices,” ECS Transactions, vol. 80, no. 7, pp. 29-36, 2017.
28. P. Reddy, B. Sarkar, F. Kaess, M. Gerhold, E. Kohn, R. Collazo and Z. Sitar, “Defect-free Ni/GaN Schottky barrier behavior with high temperature stability,” Applied Physics Letters, 110, 011603, 2017.
29. B. B. Haidet, B. Sarkar, P. Reddy, I. Bryan, Z. Bryan, R. Kirste, R. Collazo and Z. Sitar, “Nonlinear analysis of Vanadium- and Titanium-based contacts to Al-rich n-AlGaN,” Japanese Journal of Applied Physics, 56, 100302, 2017.
30. P. Reddy, S. Washiyama, F. Kaess, M. H. Breckenridge, L. H. Hernandez-Balderrama, B. B. Haidet, D. Alden, A. Franke, B. Sarkar, E. Kohn, R. Collazo and Z. Sitar, “High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: band offset and passivation studies,” Journal of Applied Physics, 119, 145702, 2016.
31. B. Sarkar, B. Lee and V. Misra, “Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications,” Semiconductor Science and Technology, 30, 105014, 2015.
32. B. Sarkar, N. Ramanan, S. Jayanti, N. D. Spigna, B. Lee, P. Franzon and V. Misra, “Dual floating gate unified MOSFET with simultaneous volatile and non-volatile operation,” IEEE Electron Device Letters, vol.35, no.1, pp.48-50, 2014.
33. B. Sarkar, B. Lee, and V. Misra, “Implications of lower zero-field activation energy of dielectric in Al2O3/HfO2 bi-layer dielectric RRAM forming process,” ECS Transactions, vol. 64. pp. 43-48, 2014.