Aakash Jadhav

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Email ID:ajadhav@ec.iitr.ac.in
Phone Number:8976552674

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Education:

DegreeSubjectUniversityYear
PhDElectronics and Communication EngineeringIIT Roorkeeongoing
B. TechElectronics EngineeringMumbai University2018

Publication:

  1. A. Jadhav, Y. Dai, P. Upadhyay, W. Guo, and B. Sarkar, “Role of Interface Induced Gap States in Polar AlxGa1−xN (0 ≤ x ≤ 1) Schottky Diodes,” Journal of Electronic Materials, vol. 50, no. 6, pp. 3731–3738.
  2. A. Jadhav, L. A. M. Lyle, Z. Xu, K. K. Das, L. M. Porter, and B. Sarkar, “Temperature Dependence of Barrier Height Inhomogeneity in β-Ga2O3 Schottky Barrier Diodes,” Journal of Vacuum Science & Technology B, vol. 39, no. 4, p. 040601.
  3. A. Jadhav et al., “Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs,” IEEE Journal of the Electron Devices Society, vol. 9, pp. 570–581, 2021.
  4. A. Jadhav et al., “Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs using Rational Functions,” IEEE Transactions on Electron Devices, pp. 1–6, 2021, doi: 10.1109/TED.2021.3119528.
  5. A. Jadhav et al., “On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters,” Semiconductor Science and Technology, vol. 37, no. 1, p. 015003, Jan. 2022.