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Sanjeev Manhas

Professor

Email : sanjeev.manhas[at]ece.iitr.ac.in
Phone: +91-1332-285147
Room No. : N 207
My Website

Memories – 3D NAND, FeFET and nanoscale DRAM, Neuromorphic and In-Memory Computing, Nanoscale Transistors and Circuit Design, MEMS Energy Harvesting and Sensors, CMOS Reliability

DegreeSubjectUniversityYear Studied
Ph. D.Electronics and Electrical EngineeringDe Montfort University, Leicester, UK2003
M. Tech.Solid State TechnologyIIT Madras1996
FromToDesignationOrganisationLevel
20152019Faculty-in-Charge, TIDES Business IncubatorIIT Roorkee 
20152017Chairman, Departmental Faculty Research CommitteeIIT Roorkee 
20152019Faculty-in-Charge, STEPIIT Roorkee 
20162018Chairman, Departmental Academic Programme Committee (DAPC)IIT Roorkee
TitleCourse CodeCourseSemester
Fundamentals of MicroelectronicsEC 344UGSpring
Analog CircuitsEC 205UGAutumn
Semiconductor DevicesEC242UGAutumn
Analog ElectronicsEC 205UGAutumn
Fundamentals of ElectronicsEC 102UGAutumn
MOS Device PhysicsEC 571PGAutumn
VLSI TechnologyEC 555PGSpring
Nanoscale TransistorsEC 587PGSpring
Digital CircuitsEC 203UGAutumn
Compound Semiconductor DevicesEC 559PGSpring
Technology of Nanostructured FabricationNT 511PGAutumn

Membership Details
IEEE Electron Device Society, Member
IEEE Solid State Circuits Society, Member

TopicScholar NameStatus of PhDRegistration Year
Analysis of Si-nanowire GAA MOSFET and its Implementation in Logic DesignGaurav KaushalA2008
Performance Models for Nanoscale VLSI CircuitsBaljit KaurA2009
Vertical Nanowire Based CMOS Circuit DesignMaheshwaram SatishA2010
Carbon Nanotube Interconnects for VLSIManoj Kumar MajumderA2010
Concurrent Multi-band Oscillators for Multifunctional Wireless SystemsL SnehalathaA2011
Silicon Nanowire Based Circuit Design and NBTI ReliabilityOm PrakashA2013
Fabrication and Characterization of Vibrational Energy HarvestersSandeep Singh ChauhanA2013
Carbon Nanotube Devices for Sensor ApplicationsNarendra KumarO2014
Charge Trap Based SONOS/MONOS Devices for 3D NAND Flash Memory ApplicationsUpendra Mohan BhattA2014
Design, Analysis and Optimization of DRAM TransistorSatendra Kumar GuatamA2015
Reliability of Gallium-Nitride Based High Electron Mobility Transistors and CircuitsSourabh JindalO2015
Nanomaterials Based Biosensors for detection of pathogens and Small MoleculesPardeep KumarO2015

Selected Publications 

  1. Rangadhar Pradhan, Sanjana Afrin Raisa, Pramod Kumar, Ashish Kalkal, Narendra Kumar, Gopinath Packirisamy, Sanjeev Manhas, “Optimization, fabrication, and characterization of four electrode-based sensors for blood impedance measurement”, Biomedical Microdevices 23 (1), 1-9, 2021.
  2. S Jindal, SK Manhas, SK Gautam, S Balatti, A Kumar, M Pakala, “Investigation of Gate-Length Scaling of Ferroelectric FET”, IEEE Transactions on Electron Devices 68 (3), 1364-1368, 2021.
  3. R Pradhan, A Kalkal, S Jindal, G Packirisamy, S Manhas, “Four electrode-based impedimetric biosensors for evaluating cytotoxicity of tamoxifen on cervical cancer cells”, RSC Advances 11 (2), 798-806, 2021.
  4. SK Gautam, SK Manhas, A Kumar, M Pakala, “Mitigating the Passing Word Line Induced Soft Errors in Saddle Fin DRAM”, IEEE Transactions on Electron Devices 67 (4), 1902-190, 2020.
  5. Om Prakash, Hussam Amrouch, Sanjeev Manhas, Jörg Henkel, “Impact of NBTI aging on self-heating in nanowire FET”, IEEE Design, Automation & Test in Europe Conference & Exhibition (DATE), 1514-1519, 2020.
  6. SS Chauhan, UM Bhatt, P Gautam, S Thote, MM Joglekar, SK Manhas, “Fabrication and modeling of β-phase PVDF-TrFE based flexible piezoelectric energy harvester”, Sensors and Actuators A: Physical 304, 111879, 2020.
  7. UM Bhatt, SK Manhas, A Kumar, M Pakala, E Yieh, “Mitigating the impact of channel tapering in vertical channel 3-D NAND”, IEEE Transactions on Electron Devices 67 (3), 929-936, 2020.
  8. N. Kumar, N. K. Navani, and S. K. Manhas, “Altering the Schottky Barrier Height and Conductance by Using Metal Nanoparticles in Carbon Nanotubes-Based Devices,” IEEE Trans. Electron Devices, vol. 66, no. 6, pp. 2789–2794, 2019.
  9. S. K. Gautam, S. K. Manhas, A. Kumar, M. Pakala and E. Yieh, “Row Hammering Mitigation Using Metal Nanowire in Saddle Fin DRAM,” in IEEE Transactions on Electron Devices (Published , July 2019.) doi: 10.1109/TED.2019.2931347     
  10. Sandeep Singh Chauhan, M.M Joggler, S.K. Manhas, “High Power Density CMOS Compatible Micro- machined MEMs Energy Harvester” IEEE Sensor Journal, (Published as an early access in IEEE explore, June 2019.)
  11. S. K. Gautam, A. Kumar, and S. K. Manhas, “Improvement of Row Hammering Using Metal Nanoparticles in DRAM—A Simulation Study,” IEEE Electron Device Letters, vol. 39, pp. 1286-1289, 2018.
  12. S. S. Chauhan, M. Joglekar, and S. K. Manhas, “Influence of Process Parameters and Formation of Highly c-Axis Oriented AlN Thin Films on Mo by Reactive Sputtering,” IEEE/TMS Journal of Electronics Material, Vol. 47, no. 12, pp-7520-7530, 2018.
  13. S. S. Chauhan, M. Joglekar, and S. K. Manhas, “Fabrication of Cantilever MEMs structure of C-axis Grown AlN film for Energy Harvester Application,” Proc EEE International Conference on Industrial Technology (ICIT), Lyon, France, vol. 300, p. 200, 2018.
  14. U. M. Bhatt, A. Kumar, and S. K. Manhas, “Performance Enhancement by Optimization of Poly Grain Size and Channel Thickness in a Vertical Channel 3-D NAND Flash Memory,” IEEE Transactions on Electron Devices, vol. 65, pp. 1781-1786, 2018.
  15. O. Prakash, S. Maheshwaram, M. Sharma, A. Bulusu, and S. K. Manhas, “Performance and Variability Analysis of SiNW 6T-SRAM Cell Using Compact Model With Parasitics,” IEEE Transactions on Nanotechnology, vol. 16, pp. 965-973, 2017.
  16. O. Prakash, S. Beniwal, S. Maheshwaram, A. Bulusu, N. Singh, and S. Manhas, “Compact NBTI Reliability Modeling in Si Nanowire MOSFETs and Effect in Circuits,” IEEE Transactions on Device Materials Reliability, vol. 17, pp. 404-413, 2017.
  17. A. Pandey, H. Kumar, S. Manhas, S. Dasgupta, and B. Anand, “Atypical Voltage Transitions in FinFET Multistage Circuits: Origin and Significance,” IEEE Transactions on Electron Devices, vol. 63, pp. 1392-1396, 2016.
  18. A. Joshi, S. Manhas, S. K. Sharma, and S. Dasgupta, “An 8 bit, 100 kS/s, switch-capacitor DAC SAR ADC for RFID applications,” Microelectronics Journal, vol. 46, pp. 453-461, 2015.
  19. R. Shankar, G. Kaushal, S. Maheshwaram, S. Dasgupta, and S. Manhas, “A degradation model of double gate and gate-all-around MOSFETs with interface trapped charges including effects of channel mobile charge carriers,” J IEEE transactions on Device Materials Reliability, vol. 14, pp. 689-697, 2014.
  20. A. Pandey, S. Raycha, S. Maheshwaram, S. K. Manhas, S. Dasgupta, A. K. Saxena, and B. Anand, “Effect of load capacitance and input transition time on FinFET inverter capacitances,” J IEEE Transactions on Electron Devices, vol. 61, pp. 30-36, 2014.
  21. M. K. Majumder, B. K. Kaushik, and S. K. Manhas, “Analysis of delay and dynamic crosstalk in bundled carbon nanotube interconnects,” IEEE Transactions on Electromagnetic Compatibility, vol. 56, pp. 1666-1673, 2014.
  22. A. Kumar, V. Kumar, S. Agarwal, A. Basak, N. Jain, A. Bulusu, and S. Manhas, “Nitrogen-terminated semiconducting zigzag GNR FET with negative differential resistance,” IEEE Transactions on Nanotechnology, vol. 13, pp. 16-22, 2014.
  23. G. Kaushal, S. Manhas, S. Maheshwaram, B. Anand, S. Dasgupta, and N. Singh, “Novel Design Methodology Using Lext Sizing in Nanowire CMOS Logic,” IEEE Transactions on Nanotechnology, vol. 13, pp. 650-658, 2014.
  24. B. Kaur, N. Alam, S. Manhas, and B. Anand, “Efficient ECSM Characterization Considering Voltage, Temperature, and Mechanical Stress Variability,” IEEE Trans. on Circuits Systems, vol. 61, pp. 3407-3415, 2014.
  25. N. Jain, S. Manhas, A. Aggarwal, and P. Chaudhry, “Effect of metal contact on CNT based sensing of NO2 molecules,” in Physics of Semiconductor Devices, ed: Springer, Cham, 2014, pp. 637-639.
  26. S. Maheshwaram, S. Manhas, G. Kaushal, B. Anand, and N. Singh, “Vertical nanowire CMOS parasitic modeling and its performance analysis,” IEEE Transactions on Electron Devices, vol. 60, pp. 2943-2950, 2013.
  27. M. K. Majumder, N. D. Pandya, B. Kaushik, and S. Manhas, “Analysis of MWCNT and bundled SWCNT interconnects: Impact on crosstalk and area,” IEEE Electron Device Letters, vol. 33, pp. 1180-1182, 2012.
  28. S. Maheshwaram, S. Manhas, G. Kaushal, B. Anand, and N. Singh, “Device circuit co-design issues in vertical nanowire CMOS platform,” IEEE Electron Device Letters, vol. 33, pp. 934-936, 2012.
  29. G. Kaushal, S. Manhas, S. Maheshwaram, S. Dasgupta, B. Anand, and N. Singh, “Tuning source/drain extension profile for current matching in nanowire CMOS logic,” IEEE Transactions on Nanotechnology, vol. 11, pp. 1033-1039, 2012.
  30. S. Manhas, N. Singh, and G. Lo, “Barrier layer thickness analysis for reliable copper plug process in CMOS technology,” J Microelectronics Reliability, vol. 51, pp. 1365-1371, 2011.
  31. S. Maheshwaram, S. Manhas, G. Kaushal, B. Anand, and N. Singh, “Vertical silicon nanowire gate-all-around field effect transistor based nanoscale CMOS,” IEEE Electron Device Letters, vol. 32, pp. 1011-1013, 2011.
  32. N. Singh, K. D. Buddharaju, S. Manhas, A. Agarwal, S. C. Rustagi, G. Lo, N. Balasubramanian, and D.-L. Kwong, “Si, SiGe nanowire devices by top–down technology and their applications,” IEEE Transactions on Electron Devices, vol. 55, pp. 3107-3118, 2008.
  33. M. M. De Souza, S. Manhas, D. C. Sekhar, A. Oates, and P. Chaparala, “Influence of mobility model on extraction of stress dependent source–drain series resistance,” Microelectronics Reliability, vol. 44, pp. 25-32, 2004.
  34. G. Cao, S. Manhas, E. S. Narayanan, M. De Souza, and D. Hinchley, “Comparative study of drift region designs in RF LDMOSFETs,” IEEE Transactions on Electron Devices, vol. 51, pp. 1296-1303, 2004.
  35. S. Manhas, D. C. Sehkar, A. Oates, and M. M. De Souza, “Characterisation of series resistance degradation through charge pumping technique,” Microelectronics Reliability, vol. 43, pp. 617-624, 2003.
  36. S. Manhas, M. M. De Souza, and A. S. Oates, “Quantifying the nature of hot carrier degradation in the spacer region of LDD nMOSFETs,” IEEE transactions on device materials reliability, vol. 1, pp. 134-143, 2001.
  37. M. M. De Souza, J. Wang, S. Manhas, E. S. Narayanan, and A. Oates, “A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors,” Microelectronics Reliability, vol. 41, pp. 169-177, 2001.
  38. S. Manhas, D. C. Sekhar, A. Oates, and M. De Souza, “Nature of hot carrier damage in spacer oxide of LDD n-MOSFETs,” in Microelectronics, 2002. MIEL 2002. 23rd International Conference on, 2002, pp. 735-739.
  39. S. Manhas, M. De Souza, A. Oates, and Y. Chen, “Impact of oxide degradation on universal mobility behaviour of n-MOS inversion layers,” in Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the, 2002, pp. 227-231.
  40. S. Manhas, M. De Souza, A. Gates, S. Chetlur, and E. S. Narayanan, “Early stage hot carrier degradation of state-of-the-art LDD N-MOSFETs,” in Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International, 2000, pp. 108-111.
  41. S. Maheshwaram, O. Prakash, M. Sharma, A. Bulusu, and S. Manhas, “Vertical Nanowire FET Based Standard Cell Design Employing Verilog-A Compact Model for Higher Performance,” in International Symposium on VLSI Design and Test, 2017, pp. 239-248.
  42. O. Prakash, S. Maheshwaram, M. Sharma, A. Bulusu, A. Saxena, and S. Manhas, “A unified Verilog-A compact model for lateral Si nanowire (NW) FET incorporating parasitics for circuit simulation,” in 2016 20th International Symposium on VLSI Design and Test (VDAT), 2016, pp. 1-6.
  43. S. Gautam, S. Maheshwaram, S. Manhas, A. Kumar, S. Sherman, and S. H. Jo, “Reduction of GIDL Using Dual Work-Function Metal Gate in DRAM,” in Memory Workshop (IMW), 2016 IEEE 8th International, 2016, pp. 1-4.
  44. M. Sharma, S. Maheshwaram, O. Prakash, A. Bulusu, A. Saxena, and S. Manhas, “Compact model for vertical silicon nanowire based device simulation and circuit design,” in SoC Design Conference (ISOCC), 2015 International, 2015, pp. 107-108.
  45. S. Maheshwaram, S. Manhas, and B. Anand, “Vertical nanowire transistor-based CMOS: VTC analysis,” in Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on, 2014, pp. 1-4.
  46. S. Maheshwaram, S. Manhas, G. Kaushal, and B. Anand, “Vertical nanowire MOSFET parasitic resistance modeling,” in Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of, 2013, pp. 1-2.
  47. G. Kaushal, S. Maheshwaram, S. Dasgupta, and S. Manhas, “Drive matching issues in multi gate CMOS inverter,” in Signal Processing and Communication (ICSC), 2013 International Conference on, 2013, pp. 349-354.
  48. H. Zhao, S. Rustagi, N. Singh, F.-J. Ma, G. Samudra, K. Budhaaraju, S. Manhas, C. Tung, G. Lo, and G. Baccarani, “Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport,” in Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 2008, pp. 1-4.
  49. S. K. Manhas, M Chen, K D Buddharaju, H Y Li, R Murthy, S Balakumar, N singh, G Q Lo and D L Kwong, “Copper Plug Barrier Process Optimization for Reliable Transistor Performance,” International Symp on Solid State Circuits and Materials (SSDM 2008), 23 – 26 Sep, p. 390, 2008, Japan
  50. A. Basak, S. Manhas, G. Kapil, S. Dasgupta, and N. Jain, “A Simulation Study of the Effect of Platinum Contact on CNT Based Gas Sensors Using Self-Consistent Field with NEGF Method,” in Int. Conf. on Semiconductor Processes and Devices (SISPAD), USA, 2012.
  51. S. Maheshwaram, G. Kaushal, and S. Manhas, “A high performance vertical Si nanowire CMOS for ultra high density circuits,” in Circuits and Systems (APCCAS), 2010 IEEE Asia Pacific Conference on, 2010, pp. 1219-1222.
  1. S K Manhas, S Nema, Dr A Bulusu, “A method of fabricating dual/asymmetric dielectric constant (dual-K) spacers in MOSFET,” No R20161028626, 2012 (filed), IIT Roorkee.
  2. S. K. Manhas, G. Kaushal, Anand Bulusu, “A Design Methodology using Extension Length (LEXT) Sizing in Nanowire CMOS Logic,” approved for filing by IP cell IIT Roorkee.
  3. Arvind KUMAR, Mahendra PAKALA, and Satendra Kumar GAUTAM, Sanjeev MANHAS, “DRAM AND METHOD OF MAKING,” US Patent App. 16/931,154, 2020.
  4. Sandeep Chauhan, S K Manhas, Manish Joglekar, “CMOS Compatible Micro-machined Piezoelectric Energy Harvester.” Appl no 201911020224, 2019 (Filed).
  5. A Kumar, S Manhas, M Pakala, EY Yi, “Vertical transistor fabrication for memory applications”, US Patent App. 16/519,246 2021. 
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